学术沙龙(5.15):邵庆益教授"B/N,B/P和AI/N共掺杂超小直径碳纳米管的电子结构"

By: 周新兰, PostTime: 2015/5/11, Visits: 361


报告人:  邵庆益 教授

报告时间:2015年5月15日下午2:30

报告题目:

   The electronic structures of ultra small diameter SWCNTs with B/N, B/P and Al/N co-doping

摘要:

     The electronic structures of ultra small diameter SWCNTs with B/N, B/P and Al/N co-doping are investigated by using the first principles theory. The SWCNTs evolve form metallic to semiconducting as a result of the co-doping, in most case the energy gaps increase with increasing the symmetry destruction delta.

 

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