Phase-selective in-plane heteroepitaxial growth of H-phase CrSe2

Phase-selective in-plane heteroepitaxial growth of H-phase CrSe2

Abstract

Phase engineering of two-dimensional transition metal dichalcogenides (2D-TMDs) offers opportunities for exploring unique phase-specific properties and achieving new desired functionalities. Here, we report a phase-selective in-plane heteroepitaxial method to grow semiconducting H-phase CrSe2. The lattice-matched MoSe2 nanoribbons are utilized as the in-plane heteroepitaxial template to seed the growth of H-phase CrSe2 with the formation of MoSe2-CrSe2 heterostructures. Scanning tunneling microscopy and non-contact atomic force microscopy studies reveal the atomically sharp heterostructure interfaces and the characteristic defects of mirror twin boundaries emerging in the H-phase CrSe2 monolayers. The type-I straddling band alignments with band bending at the heterostructure interfaces are directly visualized with atomic precision. The mirror twin boundaries in the H-phase CrSe2 exhibit the Tomonaga-Luttinger liquid behavior in the confined one-dimensional electronic system. Our work provides a promising strategy for phase engineering of 2D TMDs, thereby promoting the property research and device applications of specific phases.

Acknowledgements

This work was supported by the Guangdong Basic and Applied Basic Research Foundation (grant No. 2022A1515111001 (M.L.)), the Science and Technology Program of Guangzhou (grant No. 2024A04J0002 (M.L.)) and the National Research Foundation of Singapore (MOE Tier 2 grant WBS A-8000942-00-00 (A.W.)). The computation part of the work was supported by the National Supercomputer Center in Guangzhou.

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Authors and Affiliations

Contributions

M.L. and A.T.S.W. proposed and conceived this project. M.L. and J.G. performed the STM and nc-AFM experiments. M.L., Z.L., and J.X. conducted the MBE growth. M.L. and Y.Y. provided theoretical support for the experiments. M.L., Z.C., X.X, D.Z., G.E., and A.T.S.W. did the data analysis and discussed the results. M.L., D.Z., and A.T.S.W. wrote the paper with the comments from all co-authors.

Corresponding authors

Correspondence to Meizhuang Liu or Andrew T. S. Wee.